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BFR181TW PDF预览

BFR181TW

更新时间: 2024-11-17 22:27:35
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管
页数 文件大小 规格书
4页 71K
描述
Silicon NPN Planar RF Transistor

BFR181TW 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.29
最大集电极电流 (IC):0.02 A配置:Single
最小直流电流增益 (hFE):50最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):0.16 W
子类别:Other Transistors表面贴装:YES

BFR181TW 数据手册

 浏览型号BFR181TW的Datasheet PDF文件第2页浏览型号BFR181TW的Datasheet PDF文件第3页浏览型号BFR181TW的Datasheet PDF文件第4页 
BFR181T/BFR181TW  
Vishay Telefunken  
Silicon NPN Planar RF Transistor  
Electrostatic sensitive device.  
Observe precautions for handling.  
Applications  
For low noise and high gain broadband amplifiers at  
collector currents from 0.5 mA to 12 mA.  
Features  
Low noise figure  
High power gain  
1
1
13 652  
13 570  
13 581  
94 9280  
2
3
2
3
BFR181T Marking: RF  
Plastic case (SOT 23)  
BFR181TW Marking: WRF  
Plastic case (SOT 323)  
1 = Collector, 2 = Base, 3 = Emitter  
1 = Collector, 2 = Base, 3 = Emitter  
Absolute Maximum Ratings  
T
amb  
= 25 C, unless otherwise specified  
Parameter  
Test Conditions  
Symbol  
Value  
Unit  
V
V
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
CBO  
V
CEO  
V
EBO  
15  
10  
2
20  
2
V
I
C
mA  
mA  
mW  
C
Base current  
I
B
Total power dissipation  
Junction temperature  
Storage temperature range  
T
78 C  
P
tot  
160  
150  
–65 to +150  
amb  
T
j
T
stg  
C
Maximum Thermal Resistance  
T
amb  
= 25 C, unless otherwise specified  
Parameter  
Test Conditions  
Symbol  
R
thJA  
Value  
450  
Unit  
K/W  
3
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm  
plated with 35 m Cu  
Document Number 85024  
Rev. 2, 20-Jan-99  
www.vishay.de FaxBack +1-408-970-5600  
1 (4)  

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