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BFR181TF PDF预览

BFR181TF

更新时间: 2024-11-18 03:21:47
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管
页数 文件大小 规格书
5页 176K
描述
Silicon NPN Planar RF Transistor

BFR181TF 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.06
Is Samacsys:N最大集电极电流 (IC):0.02 A
配置:Single最小直流电流增益 (hFE):50
最高工作温度:150 °C极性/信道类型:NPN
最大功率耗散 (Abs):0.16 W子类别:Other Transistors
表面贴装:YESBase Number Matches:1

BFR181TF 数据手册

 浏览型号BFR181TF的Datasheet PDF文件第2页浏览型号BFR181TF的Datasheet PDF文件第3页浏览型号BFR181TF的Datasheet PDF文件第4页浏览型号BFR181TF的Datasheet PDF文件第5页 
BFR181TF  
Vishay Semiconductors  
Silicon NPN Planar RF Transistor  
Description  
1
The main purpose of this bipolar transistor is broad-  
band amplification up to 2 GHz. In the space-saving  
3-pin surface-mount SOT-490 package electrical per-  
formance and reliability are taken to a new level cov-  
ering a smaller footprint on PC boards than previous  
packages. In addition to space savings, the SOT-490  
provides a higher level of reliability than other 3-pin  
packages, such as more resistance to moisture. Due  
to the short length of its leads the SOT-490 is also  
reducing package inductances resulting in some bet-  
2
3
16867  
Electrostatic sensitive device.  
Observe precautions for handling.  
ter electrical performance. All of these aspects make  
this device an ideal choice for demanding RF applica-  
tions.  
Applications  
For low noise and high gain broadband amplifiers at  
collector currents from 0.5 mA to 12 mA.  
Features  
• Small feedback capacitance  
• Low noise figure  
• High power gain  
• Lead (Pb)-free component  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Mechanical Data  
Typ: BFR181TF  
Case: SOT-490 Plastic case  
Weight: approx. 2.5 mg  
Pinning: 1 = Collector, 2 = Base, 3 = Emitter  
e3  
Parts Table  
Part  
Marking  
Package  
BFR181TF  
RF  
SOT-490  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
VCBO  
Value  
Unit  
V
Collector-base voltage  
15  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
VCEO  
VEBO  
IC  
10  
V
V
2
20  
mA  
mA  
mW  
°C  
Base current  
IB  
2
160  
Total power dissipation  
Junction temperature  
Storage temperature range  
Tamb 78 °C  
Ptot  
Tj  
150  
Tstg  
- 65 to + 150  
°C  
Document Number 85100  
Rev. 1.3, 28-Apr-05  
www.vishay.com  
1

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