生命周期: | Active | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.06 |
Is Samacsys: | N | 最大集电极电流 (IC): | 0.02 A |
配置: | Single | 最小直流电流增益 (hFE): | 50 |
最高工作温度: | 150 °C | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 0.16 W | 子类别: | Other Transistors |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BFR181T-GS08 | TEMIC |
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RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, L Band, Silicon, NPN, | |
BFR181T-GS18 | TEMIC |
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暂无描述 | |
BFR181TW | VISHAY |
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Silicon NPN Planar RF Transistor | |
BFR181TW-GS08 | VISHAY |
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Transistor | |
BFR181TW-GS18 | VISHAY |
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Transistor | |
BFR181W | INFINEON |
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NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector curr | |
BFR181W_10 | INFINEON |
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NPN Silicon RF Transistor | |
BFR181WE6327 | INFINEON |
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RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Sili | |
BFR181WH6327XTSA1 | INFINEON |
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RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, L Band, Silicon, NPN, HALOGEN F | |
BFR182 | INFINEON |
获取价格 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector curr |