BFR181T

更新时间： 2024-11-17 22:27:35

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
7页	72K
描述
NPN Silicon RF Transistor

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替代型号

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BFR181T 数据手册

BFR181T

NPN Silicon RF Transistor

Preliminary data

For low noise, high-gain broadband amplifiers at

collector currents from 0.5 mA to 12 mA

f = 8 GHz

F = 1.45 dB at 900 MHz

VPS05996

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

BFR181T

RFs

1 = B

2 = E

3 = C

SC75

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CEO

CES

CBO

EBO

°C

Base current

175

Total power dissipation

tot

79°C

Junction temperature

Ambient temperature

Storage temperature

150

-65 ... 150

stg

Thermal Resistance

K/W

Junction - soldering point

405

thJS

T is measured on the collector lead at the soldering point to the pcb

For calculation of R

thJA

please refer to Application Note Thermal Resistance

Aug-09-2001

12 3 4 5 6 7

中文翻译

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BFR181T 替代型号

型号	品牌	替代类型	描述	数据表
FMMT5179TA	DIODES	功能相似	VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SA1245	TOSHIBA	功能相似	TRANSISTOR (HIGH FREQUENCY AMPLIFIER AND SWITCHING, VHF~UHF BAND LOW NOISE AMPLIFIER APPLI

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