Datasheet > BFR181_07

BFR181_07

更新时间： 2024-01-19 23:51:58

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
7页	133K
描述
NPN Silicon RF Transistor

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中文翻译

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数据手册

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BFR181_07 数据手册

BFR181

NPN Silicon RF Transistor*

• For low noise, high-gain broadband amplifiers at

collector currents from 0.5 mA to 12 mA

• f = 8 GHz, F = 0.9 dB at 900 MHz

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

* Short term description

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BFR181

Marking

RFs

Pin Configuration

Package

SOT23

1=B

2=E

3=C

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CEO

CES

CBO

EBO

°C

Base current

Total power dissipation

175

tot

T ≤ 91 °C

150

-65 ... 150

Junction temperature

Ambient temperature

Storage temperature

stg

Thermal Resistance

Parameter

Junction - soldering point

Symbol

Value

≤ 335

Unit

K/W

thJS

¹Pb-containing package may be available upon special request

²T is measured on the collector lead at the soldering point to the pcb

³For calculation of R

please refer to Application Note Thermal Resistance

thJA

2007-03-30

12 3 4 5 6 7

中文翻译

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