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BFQ591 PDF预览

BFQ591

更新时间: 2024-11-05 06:42:03
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
4页 149K
描述
isc Silicon NPN RF Transistor

BFQ591 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.58
Is Samacsys:NBase Number Matches:1

BFQ591 数据手册

 浏览型号BFQ591的Datasheet PDF文件第2页浏览型号BFQ591的Datasheet PDF文件第3页浏览型号BFQ591的Datasheet PDF文件第4页 
INCHANGE Semiconductor  
iscRF Product Specification  
isc Silicon NPN RF Transistor  
BFQ591  
DESCRIPTION  
·High Power Gain  
·High Current Gain Bandwidth Product  
·Low Noise Figure  
APPLICATIONS  
·Designed for use in MATV or CATV amplifiers and RF  
communications subscribers equipment.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
20  
UNIT  
V
15  
V
3
V
Collector Current-Continuous  
200  
mA  
W
Collector Power Dissipation  
@TC=25℃  
PC  
2.25  
175  
TJ  
Junction Temperature  
Storage Temperature Range  
-65~150  
Tstg  
isc Websitewww.iscsemi.cn  

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