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BFN18

更新时间： 2024-11-16 03:21:47

品牌	Logo	应用领域
捷特科 - ZETEX		晶体连接器连接器支架军用连接器配件晶体管高压局域网
页数	文件大小	规格书
1页	16K
描述
SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

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BFN18 数据手册

SOT89 NPN SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

BFN18

ISSUE 3 - J ANUARY 1996

✪

COMPLEMENTARY TYPE - BFN19

PARTMARKING DETAIL - DE

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

S YMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Co lle cto r-Ba se Vo lta g e

300

Co lle cto r-Em itte r Vo lta g e

Em itte r-Ba s e Vo lta g e

300

Pe ak p u ls e Cu rre n t

500

m A

Co n tin u o u s Co lle cto r Cu rre n t

Bas e Cu rren t

I_C

200

I_B

100

Po w er Dis s ip a tio n a t T_{a m b}=25°C

Op e ratin g a n d S to ra g e Te m p e ratu re Ra n g e

P_{to t}

T_j:T_{s tg}

-65 to +150

°C

ELECTRICAL CHARACTERISTICS (at T

= 25°C).

am b

PARAMETER

SYMBOL

V_(BR)CBO

MIN.

MAX.

UNIT CONDITIONS .

Co lle cto r-Ba se

Bre a kd o w n Vo ltag e

300

I_C=100µA

Co lle cto r-Em itte r

Bre a kd o w n Vo ltag e

V_(BR)CEO

I_C=1m A*

I_E=100µA

V_CB=250V

Em itte r-Ba s e Brea kd o w n V_(BR)EBO

Vo lta g e

Co lle cto r Cu t-Off Cu rre n t I_CBO

100 n A

µA

V_CB=250V, T_{a m b}=150°C

Em itte r Cu t-Off Cu rren t

I_EBO

100 n A

V_EB=3V

Co lle cto r-Em itte r

S atu ra tio n Vo lta g e

V_{CE(s a t)}

0.5

0.9

I_C=20m A, I_B=2m A

Bas e -Em itte r

S atu ra tio n Vo lta g e

V_{BE(s a t)}

h _FE

I_C=20m A, I_B=2m A

S ta tic Fo rw a rd Cu rren t

Tra n s fe r Ra tio

I_C=1m A, V_CE=10V*

I_C=10m A, V_CE=10V*

I_C=30m A, V_CE=10V*

Tra n s itio n

Freq u e n cy

f_T

Typ.

MHz

p F

I_C=20m A, V_CE=10V

f=20MHz

Ou tp u t Ca p a cita n ce

C_{o b o}

Typ.

1.5

V_CB=30V,f=1MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

For typical characteristics graphs see FMMTA42 datasheet.

3 - 44

中文翻译

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