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BFN17

更新时间： 2024-09-29 03:21:47

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捷特科 - ZETEX		晶体晶体管高压局域网
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1页	17K
描述
SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

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BFN17 数据手册

SOT89 PNP SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

BFN17

ISSUE 3 - OCTOBER 1995

✪

COMPLEMENTARY TYPE -

PARTMARKING DETAILS -

BFN16

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

S YMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

-250

UNIT

Co lle cto r-Ba se Vo lta g e

Co lle cto r-Em itte r Vo lta g e

Em itte r-Ba s e Vo lta g e

-250

-5

Pe ak Pu ls e Cu rre n t

-500

m A

Co n tin u o u s Co lle cto r Cu rre n t

Bas e Cu rren t

I_C

-200

I_B

-100

Po w er Dis s ip a tio n a t T_{a m b}=25°C

Op e ratin g a n d S to ra g e Te m p e ratu re Ra n g e

P_{to t}

-1

T_j:T_{s tg}

-65 to +150

°C

ELECTRICAL CHARACTERISTICS (at T

= 25°C).

am b

PARAMETER

S YMBOL MIN.

MAX.

UNIT

CONDITIONS .

Co lle cto r-Ba se

Bre a kd o w n Vo ltag e

V_(BR)CBO

-250

-5

I_C=-100µA

Co lle cto r-Em itte r

Bre a kd o w n Vo ltag e

V_(BR)CEO

I_C=-1m A

Em itte r-Ba s e Bre a kd o w n V_(BR)EBO

Vo lta g e

I_E=-100µA

V_CB=-250V

Co lle cto r Cu t-Off Cu rre n t I_CBO

-100

-20

n A

µA

V_CB=-250V, T_{a m b}=150 °C

Em itte r Cu t-Off Cu rren t

I_EBO

-100

-0.4

n A

V_EB=-3V

Co lle cto r-Em itte r

S atu ra tio n Vo lta g e

V_{CE(s a t)}

I_C=-20m A, I_B=-2m A

Bas e -Em itte r S atu ra tio n

Vo lta g e

V_{BE(s a t)}

h _FE

-0.9

S ta tic Fo rw a rd Cu rren t

Tra n s fe r Ra tio

I_C=-1m A, V_CE=-10V*

I_C=-10m A, V_CE=-10V*

I_C=-30m A, V_CE=-10V*

Tra n s itio n Fre q u e n cy

Ou tp u t Ca p a cita n ce

f_T

Typ .100

MHz

p F

I_C=-20m A, V_CE=-10V*

f=20MHz

C_{o b o}

Typ . 2.5

V_CB=-30V,f=1MHz

* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

For typical characteristics graphs see FMMTA92 datasheet

3 - 43

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