Datasheet > BFG540

BFG540

更新时间： 2024-10-15 18:09:35

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科信 - KEXIN		/
页数	文件大小	规格书
8页	710K
描述
NPN Silicon RF Transistor

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数据手册

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BFG540 数据手册

SMD Type

Transistors

NPN 9GHz Wideband Transistor

BFG540

SOT-143

Unit:mm

2.90±0.1

1.30±0.1

■Features

●High power gain

0~0.1

●Low noise figure

2.30±0.2

1.90 (Typ)

0.48 (max)

0.38 (min)

●High transition frequency

●Gold metallization ensures

excellent reliability.

0.45 (max)

0.15 (min)

0.88 (max)

detail X

1.70 (Typ)

0.78 (min)

1.Collector 3.Base

2.Emitter

4.Emitter

■Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Symbol

Rating

Unit

CBO

Collector - Emitter Voltage shorted base

Emitter - Base Voltage

CES

EBO

2.5

℃/W

Collector Current - Continuous

120

Total power dissipation TS

≤60 °C ^*1

Thermal resistance from junction to soldering point ^*1

tot

thJS

400

290

Junction Temperature

150

℃

Storage Temperature Range

stg

-65 to 150

*1: Ts is the temperature at the soldering point of the collector pin.

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