Datasheet > BFG520_18

BFG520_18

更新时间： 2022-06-24 15:43:48

品牌	Logo	应用领域
无锡固电 - ISC		/
页数	文件大小	规格书
3页	281K
描述
isc Silicon NPN RF Transistor

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BFG520_18 数据手册

INCHANGE Semiconductor

isc Silicon NPN RF Transistor

BFG520/X

DESCRIPTION

·Low Noise Figure

NF = 1.3 dB TYP. @V_CE= 8 V, I_C= 10 mA, f = 900 MHz

·High Gain

︱S₂₁︱²=16dB TYP. @V_CE= 8 V,I_C= 40 mA,f = 900 MHz

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·Designed for use in low noise ,high-gain amplifiers and

linear broadband amplifiers.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

2.5

Collector Current-Continuous

Collector Power Dissipation

@T_C=25℃

P_C

T_J

0.3

150

℃

Junction Temperature

Storage Temperature Range

-65~150

T_stg

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