BF801M PDF预览

BF801M

更新时间: 2025-07-17 18:52:55
品牌 Logo 应用领域
槟城 - BENCENT /
页数 文件大小 规格书
3页 207K
描述
DC BreakdownVo ltage(VBR)@100V/s(V):800; Tolerance of VBR(V):640-960; Impulse Spark-overVoltage@1KV/μs(V):≤1600; Arc Voltage (Va)@1A(V):~15; Impulse Discharge Current@8/20μs(kA):3; Insulation Resistance(GΩ):≥1; @ DC(V):100; Capacitance CO 0.5VDC@1MHZ(pF):≤1.0; Size L*W*H(mm):4.2x5.0x5.0;

BF801M 数据手册

 浏览型号BF801M的Datasheet PDF文件第2页浏览型号BF801M的Datasheet PDF文件第3页 
BF801M  
Order Code: BF801M  
Version: A1 2015-08-22  
Gas Discharge Tube  
Features  
Exterior  
Small Size Design 4.2×5.0×5.0mm Current  
Handling Capability 3,000A @ 8/20μs  
Low Capacitance and Insertion Loss  
Fast Response and Long Service Life  
Moisture sensitivity levelLevel 1  
SMD  
Application information  
Package (Top View)  
AC Power  
xDSL  
`
1
2
Agency Approvals  
Schematic Symbol  
Icon  
Description  
Compliance with 2011/65/EU  
2
1
Compliance with IEC61249-2-21:2003  
Mean lead free  
UL Certificated E232249  
Electrical Parameter  
DC Breakdown Voltage 1)2)  
Impulse Spark-over Voltage  
100V/s  
640-960  
V
At 1kV/μs  
V
V
for 99 % of measured values 1600  
At 1kV/μs  
8/20μs,±5times  
10/1000 μs ,±150 times  
5A1S  
Typical values of distribution 1500  
3,000  
100  
10  
A
Impulse Discharge Current 3)  
A
AC Discharge Current  
Arc Voltage  
Times  
V
At 1A  
~15  
1  
Insulation Resistance  
Capacitance at 1MHz  
Weight  
DC=100V  
GΩ  
pF  
g
V
DC=0.5V  
1.0  
~0.5  
Operating And Storage  
Temperature  
-40-90  
Marking  
Without  
1) At delivery AQL 0.65 level II GB/T 2828.1-2003  
2) In ionized mode  
3) Terms and waveforms in accordance with ITU-T Rec. K. 12; IEC 61643-21  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications  
www.bencent.com.cn  
1 / 3  

与BF801M相关器件

型号 品牌 获取价格 描述 数据表
BF819 NXP

获取价格

NPN high-voltage transistor
BF820 NXP

获取价格

NPN high-voltage transistors
BF820 VISHAY

获取价格

Small Signal Transistors (NPN)
BF820 DIOTEC

获取价格

Surface mount Si-Epitaxial PlanarTransistors
BF820 TRSYS

获取价格

SILICON EPITAXIAL TRANSISTORS
BF820 BL Galaxy Electrical

获取价格

NPN General Purpose Amplifier
BF820 KEXIN

获取价格

NPN High-Voltage Transistors
BF820 HTSEMI

获取价格

TRANSISTOR (NPN)
BF820 TYSEMI

获取价格

Low current (max. 50 mA) High voltage (max. 300 V).Collector current IC 50 mA
BF820 RECTRON

获取价格

SOT-23 - Power Transistor and Darlingtons