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BF620

更新时间: 2024-09-12 22:27:31
品牌 Logo 应用领域
捷特科 - ZETEX 晶体小信号双极晶体管光电二极管高压局域网
页数 文件大小 规格书
1页 37K
描述
NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

BF620 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:SMALL OUTLINE, R-PSSO-F3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.21外壳连接:COLLECTOR
最大集电极电流 (IC):0.05 A集电极-发射极最大电压:300 V
配置:SINGLE最小直流电流增益 (hFE):50
JESD-30 代码:R-PSSO-F3JESD-609代码:e0
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
最大功率耗散 (Abs):1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:FLAT
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
VCEsat-Max:0.6 VBase Number Matches:1

BF620 数据手册

  
SOT89 NPN SILICON PLANAR  
HIGH VOLTAGE TRANSISTOR  
BF620  
ISSUE 5 – MARCH 2001  
FEATURES  
C
*
High breakdown and low saturation voltages  
APPLICATIONS  
*
*
Suitable for video output stages in TV sets  
Switching power supplies  
COMPLEMENTARY TYPE:  
BF621  
E
C
PARTMARKING DETAIL –  
DC  
B
SOT89  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
300  
Collector-Emitter Voltage  
Emitter-Base Voltage  
300  
V
5
V
Peak Pulse Current  
100  
mA  
mA  
W
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
IC  
50  
1
Ptot  
Tj:Tstg  
-65 to +150  
°C  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN.  
MAX. UNIT  
CONDITIONS.  
Collector-Base  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
300  
300  
5
V
IC=10µA, IE=0  
Breakdown Voltage  
Collector-Emitter  
Breakdown Voltage  
V
V
IC=1mA, IB=0*  
Emitter-Base Breakdown  
Voltage  
IE=100µA, IC=0  
Collector Cut-Off Current  
Colector Cut-Off Current  
Emitter Cut-Off Current  
10  
20  
nA  
µA  
VCB=200V, IE=0  
VCB=200V, IE=0 †  
ICER  
50  
10  
nA  
µA  
VCE=200V, RBE=2.7KΩ  
VCE=200V, RBE=2.7K†  
IEBO  
10  
VEB=5V, IC=0  
µA  
Collector-Emitter  
VCE(sat)  
0.6  
V
IC=30mA, IB=5mA*  
IC=20mA, IB=2mA*  
IC=25mA, VCE=20V*  
Saturation Voltage  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
hFE  
0.9  
V
Static Forward  
Current Transfer Ratio  
50  
Transition Frequency  
Output Capacitance  
fT  
100 Typical MHz  
0.8 Typical pF  
IC=10mA, VCE=10V  
f=100MHz  
Cobo  
VCB=30V, f=1MHz  
†Tamb=150°C  
*Measured under pulsed conditions.  
For typical characteristics graphs see FMMTA42 datasheet.  
TBA  

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