Datasheet > BF5020WE6327

BF5020WE6327

更新时间： 2024-10-30 11:47:31

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	569K
描述
Silicon N-Channel MOSFET Tetrode

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中文翻译

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数据手册

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BF5020WE6327 数据手册

BF5020...

Silicon N-Channel MOSFET Tetrode

• Low noise gain controlled input stages of UHF- and

VHF - tuners with 3 V up to 5 V supply voltage

• Integrated gate protection diodes

• Excellent noise figure

• High gain, high forward transadmittance

• Improved cross modulation at gain reduction

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

Drain

HF Output

+ DC

AGC

Input

R_G1

GND

V_GG

EHA07461

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

Package

SOT143

Pin Configuration

1 = S 2 = D 3 = G2 4 = G1 -

Marking

KYs

BF5020

BF5020R

BF5020W

SOT143R 1 = D 2 = S 3 = G1 4 = G2 -

SOT343

1 = D 2 = S 3 = G1 4 = G2 -

KYs

Maximum Ratings

Parameter

Drain-source voltage

Symbol

Value

Unit

Continuous drain current

Gate 1/ gate 2-source current

Gate 1/ gate 2-source voltage

Total power dissipation

, I

, V

G1S G2S

tot

TS ≤ 76 °C, BF5020, BF5020R

TS ≤ 94 °C, BF5020W

200

°C

Storage temperature

Channel temperature

-55 ... 150

150

stg

2009-10-01

12 3 4 5 6 7...11

中文翻译

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