Datasheet > BF5020R-E6433

BF5020R-E6433

更新时间： 2024-10-31 03:51:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	567K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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中文翻译

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技术参数
数据手册

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BF5020R-E6433 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.76
配置：	Single	最大漏极电流 (Abs) (ID)：	0.025 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	DEPLETION MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	0.2 W	子类别：	FET General Purpose Power
表面贴装：	YES	Base Number Matches：	1

BF5020R-E6433 数据手册

BF5020...

Silicon N-Channel MOSFET Tetrode

• Low noise gain controlled input stages of UHF- and

VHF - tuners with 3 V up to 5 V supply voltage

• Integrated gate protection diodes

• Excellent noise figure

• High gain, high forward transadmittance

• Improved cross modulation at gain reduction

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

Drain

HF Output

+ DC

AGC

Input

R_G1

GND

V_GG

EHA07461

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

Package

SOT143

Pin Configuration

1 = S 2 = D 3 = G2 4 = G1 -

Marking

KYs

BF5020

BF5020R

BF5020W

SOT143R 1 = D 2 = S 3 = G1 4 = G2 -

SOT343

1 = D 2 = S 3 = G1 4 = G2 -

KYs

Maximum Ratings

Parameter

Drain-source voltage

Symbol

Value

Unit

Continuous drain current

Gate 1/ gate 2-source current

Gate 1/ gate 2-source voltage

Total power dissipation

, I

, V

G1S G2S

tot

TS ≤ 76 °C, BF5020, BF5020R

TS ≤ 94 °C, BF5020W

200

°C

Storage temperature

Channel temperature

-55 ... 150

150

stg

2009-10-01

12 3 4 5 6 7...11

中文翻译

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