是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
针数: | 4 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.75 |
Is Samacsys: | N | 其他特性: | LOW NOISE |
外壳连接: | SOURCE | 配置: | SINGLE |
最小漏源击穿电压: | 12 V | 最大漏极电流 (Abs) (ID): | 0.025 A |
最大漏极电流 (ID): | 0.025 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最高频带: | ULTRA HIGH FREQUENCY BAND | JESD-30 代码: | R-PDSO-G4 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 4 | 工作模式: | DUAL GATE, DEPLETION MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.2 W | 认证状态: | Not Qualified |
参考标准: | AEC-Q101 | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | MATTE TIN |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BF5020R-E6327 | INFINEON |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
BF5020R-E6433 | INFINEON |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
BF5020W | INFINEON |
获取价格 |
Silicon N-Channel MOSFET Tetrode | |
BF5020WE6327 | INFINEON |
获取价格 |
Silicon N-Channel MOSFET Tetrode | |
BF5020W-E6327 | INFINEON |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
BF5020W-E6433 | INFINEON |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
BF5020WH6327XTSA1 | INFINEON |
获取价格 |
RF Small Signal Field-Effect Transistor | |
BF503 | INFINEON |
获取价格 |
NPN SILICON RF TRANSISTOR | |
BF5030 | INFINEON |
获取价格 |
Silicon N-Channel MOSFET Tetrode | |
BF5030_09 | INFINEON |
获取价格 |
Silicon N-Channel MOSFET Tetrode |