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BF5020R PDF预览

BF5020R

更新时间: 2024-11-26 06:41:59
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体小信号场效应晶体管射频小信号场效应晶体管光电二极管放大器
页数 文件大小 规格书
11页 569K
描述
Silicon N-Channel MOSFET Tetrode

BF5020R 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.75
Is Samacsys:N其他特性:LOW NOISE
外壳连接:SOURCE配置:SINGLE
最小漏源击穿电压:12 V最大漏极电流 (Abs) (ID):0.025 A
最大漏极电流 (ID):0.025 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G4
JESD-609代码:e3元件数量:1
端子数量:4工作模式:DUAL GATE, DEPLETION MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.2 W认证状态:Not Qualified
参考标准:AEC-Q101子类别:FET General Purpose Power
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

BF5020R 数据手册

 浏览型号BF5020R的Datasheet PDF文件第2页浏览型号BF5020R的Datasheet PDF文件第3页浏览型号BF5020R的Datasheet PDF文件第4页浏览型号BF5020R的Datasheet PDF文件第5页浏览型号BF5020R的Datasheet PDF文件第6页浏览型号BF5020R的Datasheet PDF文件第7页 
BF5020...  
Silicon N-Channel MOSFET Tetrode  
Low noise gain controlled input stages of UHF- and  
3
VHF - tuners with 3 V up to 5 V supply voltage  
2
1
4
Integrated gate protection diodes  
Excellent noise figure  
High gain, high forward transadmittance  
Improved cross modulation at gain reduction  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
Drain  
HF Output  
+ DC  
G2  
G1  
AGC  
HF  
Input  
RG1  
GND  
VGG  
EHA07461  
ESD (Electrostatic discharge) sensitive device, observe handling precaution!  
Type  
Package  
SOT143  
Pin Configuration  
1 = S 2 = D 3 = G2 4 = G1 -  
Marking  
KYs  
KYs  
BF5020  
BF5020R  
BF5020W  
-
-
-
SOT143R 1 = D 2 = S 3 = G1 4 = G2 -  
SOT343  
1 = D 2 = S 3 = G1 4 = G2 -  
KYs  
Maximum Ratings  
Parameter  
Drain-source voltage  
Symbol  
V
DS  
Value  
8
Unit  
V
25  
mA  
Continuous drain current  
Gate 1/ gate 2-source current  
Gate 1/ gate 2-source voltage  
Total power dissipation  
I
D
I
, I  
, V  
10  
6
mA  
V
mW  
G1S G2S  
V
P
G1S G2S  
tot  
TS 76 °C, BF5020, BF5020R  
TS 94 °C, BF5020W  
200  
200  
°C  
Storage temperature  
Channel temperature  
T
T
-55 ... 150  
150  
stg  
ch  
2009-10-01  
1

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