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BF472 PDF预览

BF472

更新时间: 2024-11-22 14:51:51
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
20页 655K
描述
300V,50mA,1.25W Through-Hole Transistor-Small Signal (<=1A) PNP High Voltage

BF472 数据手册

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BF469 BF471 NPN  
BF470 BF472 PNP  
www.centralsemi.com  
COMPLEMENTARY  
HIGH VOLTAGE  
POWER TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR BF469 series  
devices are silicon, complementary high voltage power  
transistors designed for Class-B video output stages  
in television receivers and for high voltage IF output  
stages.  
MARKING: FULL PART NUMBER  
TO-126 CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
BF469  
BF470  
250  
BF471  
BF472  
300  
A
SYMBOL  
UNITS  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
CBO  
CEO  
EBO  
V
V
250  
300  
V
V
5.0  
50  
Continuous Collector Current  
Peak Collector Current  
Peak Base Current  
I
mA  
mA  
mA  
W
C
I
100  
50  
CM  
I
BM  
Power Dissipation  
P
1.25  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
100  
°C  
J
stg  
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
J
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
I
I
V
V
V
=200V  
10  
nA  
CBO  
CBO  
EBO  
CB  
CB  
EB  
=200V, T =150°C  
J
=5.0V  
10  
50  
μA  
nA  
V
BV  
BV  
BV  
BV  
I =100μA (BF469, BF470)  
250  
300  
250  
300  
CBO  
CBO  
C
I =100μA (BF471, BF472)  
V
C
I =10mA (BF469, BF470)  
V
CEO  
C
I =10mA (BF471, BF472)  
V
CEO  
C
V
I =30mA, I =5.0mA  
0.6  
V
CE(SAT)  
FE  
C
B
h
V
=20V, I =25mA  
50  
60  
CE  
CE  
C
f
V
=10V, I =10mA, f=100MHz  
MHz  
T
C
R1 (7-May 2019)  

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