Datasheet > BF1217WR

BF1217WR

更新时间： 2025-07-16 20:05:43

品牌	Logo	应用领域
恩智浦 - NXP		放大器光电二极管晶体管
页数	文件大小	规格书
17页	140K
描述
TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, PLASTIC PACKAGE-4, FET RF Small Signal

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BF1217WR 技术参数

BF1217WR

N-channel dual gate MOSFET

Rev. 2 — 20 June 2011

Product data sheet

1. Product profile

1.1 General description

Enhancement type N-channel field-effect transistor with source and substrate

interconnected. Integrated diodes between gates and source protect against excessive

input voltage surges. The BF1217WR is encapsulated in the SOT343R plastic package.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features and benefits

 Excellent low frequency noise performance

 Superior cross modulation performance during AGC

 High forward transfer admittance

 High forward transfer admittance to input capacitance ratio

1.3 Applications

 Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply

voltage

 digital and analog television tuners

 professional communication equipment

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