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BDY23 PDF预览

BDY23

更新时间: 2024-09-23 06:41:59
品牌 Logo 应用领域
COMSET 晶体晶体管
页数 文件大小 规格书
4页 239K
描述
NPN SILICON TRANSISTORS, DIFFUSED MESA

BDY23 数据手册

 浏览型号BDY23的Datasheet PDF文件第2页浏览型号BDY23的Datasheet PDF文件第3页浏览型号BDY23的Datasheet PDF文件第4页 
BDY23, 180 T2  
BDY24, 181 T2  
BDY25, 182 T2  
NPN SILICON TRANSISTORS, DIFFUSED MESA  
LF Large Signal Power Amplification  
High Current Fast Switching  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Ratings  
Value  
Unit  
BDY23, 180T2  
BDY24, 181T2  
BDY25, 182T2  
BDY23, 180T2  
BDY24, 181T2  
BDY25, 182T2  
BDY23, 180T2  
BDY24, 181T2  
BDY25, 182T2  
BDY23, 180T2  
BDY24, 181T2  
BDY25, 182T2  
BDY23, 180T2  
BDY24, 181T2  
BDY25, 181T2  
BDY23, 180T2  
60  
Collector-Emitter Voltage  
VCEO  
90  
V
140  
60  
Collector-Base Voltage  
VCBO  
100  
200  
V
Emitter-Base Voltage  
Collector Current  
Base Current  
VEBO  
IC  
10  
V
A
6
3
IB  
A
Power Dissipation  
@ TC = 25° BDY24, 181T2  
PTOT  
87.5  
Watts  
BDY25, 182T2  
Junction Temperature  
Storage Temperature  
TJ  
BDY23, 180T2  
BDY24, 181T2  
BDY25, 182T2  
200  
°C  
-65 to +200  
TStg  
COMSET SEMICONDUCTORS  
1/4  

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