Datasheet > BDY184

BDY184

更新时间： 2024-02-22 13:05:33

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	168K
描述
NPN Silicon Transistors. Diffused MESA

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数据手册

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BDY184 数据手册

BDY26, 183 T2

BDY27, 184 T2

BDY28, 185 T2

NPN SILICON TRANSISTORS, DIFFUSED MESA

LF Large Signal Power Amplification

High Current Fast Switching

ABSOLUTE MAXIMUM RATINGS

Symbol

V_CEO

Ratings

Value

Unit

BDY26, 183T2

BDY27, 184T2

BDY28, 185T2

BDY26, 183T2

BDY27, 184T2

BDY28, 185T2

BDY26, 183T2

BDY27, 184T2

BDY28, 185T2

BDY26, 183T2

BDY27, 184T2

BDY28, 185T2

BDY26, 183T2

BDY27, 184T2

BDY28, 185T2

BDY26, 183T2

BDY27, 184T2

BDY28, 185T2

180

200

250

300

400

500

Collector-Emitter Voltage

Collector-Base Voltage

V_CBO

V_EBO

Emitter-Base Voltage

Collector Current

Base Current

I_C

I_B

P_TOT

Power Dissipation

@ T_C= 25°

87.5

Watts

T_J

Junction Temperature

Storage Temperature

BDY26, 183T2

BDY27, 184T2

BDY28, 185T2

200

-65 to +200

°C

T_Stg

CO MSET SEMICO N DUCTO RS

1/4

12 3 4

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与BDY184相关器件

型号	品牌	获取价格	描述	数据表
BDY185	ETC	获取价格	NPN Silicon Transistors. Diffused MESA
BDY20	SEME-LAB	获取价格	Bipolar NPN Device
BDY23	COMSET	获取价格	NPN SILICON TRANSISTORS, DIFFUSED MESA
BDY23	SEME-LAB	获取价格	Bipolar NPN Device in a Hermetically sealed TO3
BDY23	ISC	获取价格	isc Silicon NPN Power Transistor
BDY23	NJSEMI	获取价格	LF large signal power amplification
BDY23A	NJSEMI	获取价格	Trans GP BJT NPN 60V 6A 3-Pin(2+Tab) TO-3
BDY23A	SEME-LAB	获取价格	Bipolar NPN Device in a Hermetically sealed TO3
BDY23B	SEME-LAB	获取价格	Bipolar NPN Device in a Hermetically sealed TO3
BDY23B	NJSEMI	获取价格	Trans GP BJT NPN 60V 6A 3-Pin(2+Tab) TO-3