BDX88B

更新时间： 2024-02-29 10:55:57

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	203K
描述
Silicon PNP Darlington Power Transistor

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BDX88B 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

BDX88/A/B/C

DESCRIPTION

·High DC Current Gain-

: h_FE= 750(Min)@ I_C= -6A

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= -45V(Min)- BDX88; -60V(Min)- BDX88A

-80V(Min)- BDX88B; -100V(Min)- BDX88C

·Complement to Type BDX87/A/B/C

APPLICATIONS

·Designed for use in power linear and switching applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

BDX88

-45

BDX88A

BDX88B

BDX88C

BDX88

-60

-80

V_CBO

Collector-Base Voltage

-100

-45

BDX88A

BDX88B

BDX88C

-60

V_CEO

Collector-Emitter Voltage

Emitter-Base Voltage

-80

-100

-5

V_EBO

I_C

I_CM

I_B

Collector Current-Continuous

Collector Current-Peak

Base Current

-12

-18

-200

120

200

-65~200

℃

Collector Power Dissipation

@ T_C=25℃

P_C

T_J

Junction Temperature

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Case

1.45

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

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