Datasheet > BDX87C

BDX87C

更新时间： 2024-09-29 08:52:07

品牌	Logo	应用领域
SAVANTIC		晶体晶体管局域网
页数	文件大小	规格书
3页	111K
描述
Silicon NPN Power Transistors

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BDX87C 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

BDX87C

DESCRIPTION

·With TO-3 package

·Complement to type BDX88C

·DARLINGTON

APPLICATIONS

·Designed for use in power linear and

switching application.

PINNING (See Fig.2)

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-3) and symbol

Collector

Absolute maximum ratings(Ta=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

CONDITIONS

Open emitter

VALUE

100

UNIT

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Open base

Open collector

I_CM

Collector current(peak)

Base current

I_B

0.2

P_T

Total power dissipation

Max. operating Junction temperature

Storage temperature

T_C=25ꢀ

120

200

-65~200

ꢀ

T_j

T_stg

ꢀ

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal resistance from junction to case

1.45

ꢀ/W

12 3

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与BDX87C相关器件

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BDX88	SEME-LAB	获取价格	Bipolar PNP Device in a Hermetically sealed TO3 Metal Package
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BDX88A	SEME-LAB	获取价格	Bipolar PNP Device in a Hermetically sealed TO3
BDX88A	ISC	获取价格	Silicon PNP Darlington Power Transistor
BDX88A	CENTRAL	获取价格	Power Transistors
BDX88B	SEME-LAB	获取价格	Bipolar PNP Device
BDX88B	CENTRAL	获取价格	Power Transistors
BDX88B	ISC	获取价格	Silicon PNP Darlington Power Transistor
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