BDX87C

更新时间： 2024-09-29 06:41:59

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管局域网
页数	文件大小	规格书
2页	203K
描述
Silicon NPN Darlington Power Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BDX87C 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlington Power Transistor

BDX87/A/B/C

DESCRIPTION

·High DC Current Gain-

: h_FE= 750(Min)@ I_C= 6A

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= 45V(Min)- BDX87; 60V(Min)- BDX87A

80V(Min)- BDX87B; 100V(Min)- BDX87C

·Complement to Type BDX88/A/B/C

APPLICATIONS

·Designed for use in power linear and switching applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

BDX87

BDX87A

BDX87B

BDX87C

BDX87

V_CBO

Collector-Base Voltage

100

BDX87A

BDX87B

BDX87C

V_CEO

Collector-Emitter Voltage

Emitter-Base Voltage

100

V_EBO

I_C

I_CM

I_B

Collector Current-Continuous

Collector Current-Peak

Base Current

200

120

200

-65~200

℃

Collector Power Dissipation

@ T_C=25℃

P_C

T_J

Junction Temperature

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Case

1.45

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

中文翻译

下载PDF

与BDX87C相关器件

型号	品牌	获取价格	描述	数据表
BDX88	SEME-LAB	获取价格	Bipolar PNP Device in a Hermetically sealed TO3 Metal Package
BDX88	CENTRAL	获取价格	Power Transistors
BDX88	ISC	获取价格	Silicon PNP Darlington Power Transistor
BDX88A	SEME-LAB	获取价格	Bipolar PNP Device in a Hermetically sealed TO3
BDX88A	ISC	获取价格	Silicon PNP Darlington Power Transistor
BDX88A	CENTRAL	获取价格	Power Transistors
BDX88B	SEME-LAB	获取价格	Bipolar PNP Device
BDX88B	CENTRAL	获取价格	Power Transistors
BDX88B	ISC	获取价格	Silicon PNP Darlington Power Transistor
BDX88C	ISC	获取价格	Silicon PNP Darlington Power Transistor