BDX86

更新时间： 2024-09-27 06:41:59

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	203K
描述
Silicon PNP Darlington Power Transistor

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BDX86 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

BDX86/A/B/C

DESCRIPTION

·High DC Current Gain-

: h_FE= 750(Min)@ I_C= -3A

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= -45V(Min)- BDX86; -60V(Min)- BDX86A

-80V(Min)- BDX86B; -100V(Min)- BDX86C

·Complement to Type BDX85/A/B/C

APPLICATIONS

·Designed for use in power linear and switching applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

BDX86

-45

BDX86A

BDX86B

BDX86C

BDX86

-60

-80

V_CBO

Collector-Base Voltage

-100

-45

BDX86A

BDX86B

BDX86C

-60

V_CEO

Collector-Emitter Voltage

Emitter-Base Voltage

-80

-100

-5

V_EBO

I_C

I_CM

I_B

Collector Current-Continuous

Collector Current-Peak

Base Current

-10

-15

-100

100

200

-65~200

℃

Collector Power Dissipation

@ T_C=25℃

P_C

T_J

Junction Temperature

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Case

1.75

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

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与BDX86相关器件

型号	品牌	获取价格	描述	数据表
BDX86A	CENTRAL	获取价格	Power Transistors
BDX86A	SEME-LAB	获取价格	Bipolar PNP Device in a Hermetically sealed TO3
BDX86A	ISC	获取价格	Silicon PNP Darlington Power Transistor
BDX86B	CENTRAL	获取价格	Power Transistors
BDX86B	ISC	获取价格	Silicon PNP Darlington Power Transistor
BDX86B	SEME-LAB	获取价格	Bipolar PNP Device in a Hermetically sealed TO3
BDX86C	ISC	获取价格	Silicon PNP Darlington Power Transistor
BDX86C	CENTRAL	获取价格	Power Transistors
BDX86C	SEME-LAB	获取价格	Bipolar PNP Device in a Hermetically sealed TO3
BDX86LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 10A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2