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BDX34CG PDF预览

BDX34CG

更新时间： 2024-09-28 03:21:39
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管开关局域网
页数 文件大小 规格书
6页 74K
描述
Darlington Complementary Silicon Power Transistors

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中文翻译

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BDX34CG 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：TO-220AB包装说明：LEAD FREE, CASE 221A-09, 3 PIN
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99Factory Lead Time：1 week
风险等级：0.84其他特性：LEADFORM OPTIONS ARE AVAILABLE
外壳连接：COLLECTOR最大集电极电流 (IC)：10 A
集电极-发射极最大电压：100 V配置：DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE)：750JEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：260极性/信道类型：PNP
最大功率耗散 (Abs)：70 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子面层：Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：3 MHzBase Number Matches：1

BDX34CG 数据手册

 浏览型号BDX34CG的Datasheet PDF文件第2页浏览型号BDX34CG的Datasheet PDF文件第3页浏览型号BDX34CG的Datasheet PDF文件第4页浏览型号BDX34CG的Datasheet PDF文件第5页浏览型号BDX34CG的Datasheet PDF文件第6页 
BDX33B, BDX33C* (NPN)  
BDX34B, BDX34C* (PNP)  
BDX33C and BDX34C are Preferred Devices  
Darlington Complementary  
Silicon Power Transistors  
These devices are designed for general purpose and low speed  
switching applications.  
http://onsemi.com  
Features  
DARLINGTON  
10 AMPERE  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
80−100 VOLTS, 65 WATTS  
• High DC Current Gain − h = 2500 (typ.) at I = 4.0  
FE  
C
• Collector−Emitter Sustaining Voltage at 100 mAdc  
V
= 80 Vdc (min) − BDX33B, BDX334B  
= 100 Vdc (min) − BDX33C, BDX334C  
CEO(sus)  
• Low Collector−Emitter Saturation Voltage  
V
= 2.5 Vdc (max) at I = 3.0 Adc  
CE(sat)  
C
− BDX33B, 33C/34B, 34C  
• Monolithic Construction with Build−In Base−Emitter Shunt Resistors  
• Pb−Free Packages are Available*  
MAXIMUM RATINGS  
TO−220AB  
Rating  
Symbol  
Value  
Unit  
CASE 221A−09  
Collector−Emitter Voltage  
V
Vdc  
CEO  
1
STYLE 1  
BDX33B, BDX34B  
BDX33C, BDX34C  
80  
100  
2
3
Collector−Base Voltage  
V
Vdc  
CB  
EB  
BDX33B, BDX34B  
BDX33C, BDX34C  
80  
100  
MARKING DIAGRAM  
Emitter−Base Voltage  
V
5.0  
Vdc  
Adc  
Collector Current − Continuous  
− Peak  
I
10  
15  
C
Base Current  
I
0.25  
Adc  
B
BDX3xyG  
AY WW  
Total Device Dissipation @ T = 25_C  
P
70  
0.56  
W
W/_C  
_C  
C
D
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
J
−65 to +150  
stg  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max  
Unit  
Thermal Resistance, Junction−to−Case  
R
1.78  
_C/W  
q
JC  
BDX3xy = Device Code  
x = 3 or 4  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
y = B or C  
A
= Assembly Location  
Y
= Year  
WW  
G
= Work Week  
= Pb−Free Package  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 11  
BDX33B/D  
123456

中文翻译

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BDX34CG 替代型号

型号 品牌 替代类型 描述 数据表
2N6042G ONSEMI

类似代替

 Plastic Medium−Power Complementary Silicon Transistors
BDX54CG ONSEMI

类似代替

 Plastic Medium-Power Complementary Silicon Transistors
BDW47G ONSEMI

类似代替

 Darlington Complementary Silicon Power Transistors

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