5秒后页面跳转
BDX34C-S PDF预览

BDX34C-S

更新时间: 2024-09-28 19:56:43
品牌 Logo 应用领域
伯恩斯 - BOURNS 局域网开关晶体管
页数 文件大小 规格书
5页 85K
描述
Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220, FM-3

BDX34C-S 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.15
外壳连接:COLLECTOR最大集电极电流 (IC):10 A
集电极-发射极最大电压:100 V配置:DARLINGTON
最小直流电流增益 (hFE):750JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子面层:TIN SILVER COPPER端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BDX34C-S 数据手册

 浏览型号BDX34C-S的Datasheet PDF文件第2页浏览型号BDX34C-S的Datasheet PDF文件第3页浏览型号BDX34C-S的Datasheet PDF文件第4页浏览型号BDX34C-S的Datasheet PDF文件第5页 
BDX34, BDX34A, BDX34B, BDX34C, BDX34D  
PNP SILICON POWER DARLINGTONS  
Designed for Complementary Use with  
BDX33, BDX33A, BDX33B, BDX33C and  
BDX33D  
TO-220 PACKAGE  
(TOP VIEW)  
70 W at 25°C Case Temperature  
10 A Continuous Collector Current  
1
2
3
B
C
E
Minimum h of 750 at 3V, 3 A  
FE  
This series is currently available, but  
not recommended for new designs.  
Pin 2 is in electrical contact with the mounting base.  
MDTRACA  
absolute maximum ratings at 25°C case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
BDX34  
-45  
-60  
BDX34A  
BDX34B  
BDX34C  
BDX34D  
BDX34  
Collector-base voltage (IE = 0)  
Collector-emitter voltage (IB = 0)  
VCBO  
-80  
V
-100  
-120  
-45  
BDX34A  
BDX34B  
BDX34C  
BDX34D  
-60  
VCEO  
-80  
V
-100  
-120  
-5  
Emitter-base voltage  
VEBO  
IC  
V
A
Continuous collector current  
Continuous base current  
-10  
IB  
-0.3  
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 1)  
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)  
Operating free air temperature range  
Ptot  
Ptot  
TJ  
70  
W
W
°C  
°C  
°C  
2
-65 to +150  
-65 to +150  
-65 to +150  
Storage temperature range  
Tstg  
TA  
Operating free-air temperature range  
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.  
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.  
AUGUST 1993 - REVISED SEPTEMBER 2002  
Specifications are subject to change without notice.  
1

BDX34C-S 替代型号

型号 品牌 替代类型 描述 数据表
BDX34CG ONSEMI

功能相似

Darlington Complementary Silicon Power Transistors
BDX34C STMICROELECTRONICS

功能相似

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

与BDX34C-S相关器件

型号 品牌 获取价格 描述 数据表
BDX34CT MOTOROLA

获取价格

Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plas
BDX34CU MOTOROLA

获取价格

10A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB
BDX34CU2 MOTOROLA

获取价格

Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plas
BDX34CUA MOTOROLA

获取价格

10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB
BDX34CW MOTOROLA

获取价格

10A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB
BDX34CWD MOTOROLA

获取价格

暂无描述
BDX34D TRSYS

获取价格

NPN/PNP PLASTIC POWER TRANSISTORS
BDX34D POINN

获取价格

Transistor de puissance PNP darlington
BDX34D-6200 RENESAS

获取价格

10A, 120V, PNP, Si, POWER TRANSISTOR, TO-220AB
BDX34D-6203 RENESAS

获取价格

Power Bipolar Transistor, 10A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plas