BDW74, BDW74A, BDW74B, BDW74C, BDW74D
PNP SILICON POWER DARLINGTONS
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Designed for Complementary Use with
BDW73, BDW73A, BDW73B, BDW73C and
BDW73D
TO-220 PACKAGE
(TOP VIEW)
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80 W at 25°C Case Temperature
8 A Continuous Collector Current
1
2
3
B
C
E
Minimum h of 750 at 3V, 3 A
FE
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
BDW74
-45
BDW74A
BDW74B
BDW74C
BDW74D
BDW74
-60
Collector-base voltage (IE = 0)
VCBO
-80
V
V
-100
-120
-45
BDW74A
BDW74B
BDW74C
BDW74D
-60
Collector-emitter voltage (IB = 0) (see Note 1)
VCEO
-80
-100
-120
Emitter-base voltage
VEBO
IC
-5
V
A
Continuous collector current
-8
Continuous base current
IB
-0.3
80
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Ptot
Ptot
W
W
mJ
°C
°C
°C
2
2
½LIC
75
Tj
Tstg
TA
-65 to +150
-65 to +150
-65 to +150
Operating temperature range
Operating free-air temperature range
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -5 mA, RBE = 100 Ω,
BE(off) = 0, RS = 0.1 Ω, VCC = -20 V.
V
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1