BDW46BV

更新时间： 2024-11-14 13:05:55

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管功率双极晶体管
页数	文件大小	规格书
8页	78K
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中文翻译

获取价格

数据手册

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BDW46BV 数据手册

BDW42* − NPN, BDW46,

BDW47* − PNP

Preferred Device

Darlington Complementary

Silicon Power Transistors

This series of plastic, medium−power silicon NPN and PNP

Darlington transistors are designed for general purpose and low speed

switching applications.

http://onsemi.com

Features

15 A DARLINGTON

COMPLEMENTARY SILICON

POWER TRANSISTORS

80−100 V, 85 W

• Pb−Free Package is Available**

• High DC Current Gain − h = 2500 (typ) @ I = 5.0 Adc.

• Collector Emitter Sustaining Voltage @ 30 mAdc:

= 80 Vdc (min) − BDW46

CEO(sus)

100 Vdc (min.) − BDW42/BDW47

MARKING

DIAGRAM

• Low Collector Emitter Saturation Voltage

CE(sat)

= 2.0 Vdc (max) @ I = 5.0 Adc

3.0 Vdc (max) @ I = 10.0 Adc

• Monolithic Construction with Built−In Base Emitter Shunt resistors

• TO−220AB Compact Package

TO−220AB

CASE 221A

STYLE 1

BDWxx

YYWW

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

CEO

Vdc

BDW46

BDW42, BDW47

Collector-Base Voltage

100

xx = 42, 46 or 47

YY = Year

WW = Work Week

Vdc

BDW46

BDW42, BDW47

100

Emitter-Base Voltage

Collector Current

Base Current

5.0

Vdc

Adc

ORDERING INFORMATION

0.5

†

Device

Package

Shipping

Total Device Dissipation

BDW42

TO−220AB

50 Units/Rail

@ T = 25°C

Derate above 25°C

0.68

W/°C

BDW46

BDW47

BDW47G

TO−220AB

50 Units/Rail

Operating and Storage Junction

Temperature Range

T , T

−55 to

+150

°C

stg

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

TO−220AB

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance,

Junction−to−Case

Symbol

Max

Unit

*Preferred devices are ON Semiconductor recommended

choices for future use and best overall value

1.47

°C/W

**For additional information on our Pb−Free strategy and soldering details,

please download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

June, 2004 − Rev. 11

BDW42/D

12 3 4 5 6 7 8

中文翻译

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与BDW46BV相关器件

型号	品牌	获取价格	描述	数据表
BDW46C	MOTOROLA	获取价格	Power Bipolar Transistor, 15A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
BDW46D1	MOTOROLA	获取价格	15A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB
BDW46DW	ONSEMI	获取价格	15A, 80V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BDW46G	ONSEMI	获取价格	Darlington Complementary Silicon Power Transistors
BDW46L	MOTOROLA	获取价格	15A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB
BDW46N	MOTOROLA	获取价格	15A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB
BDW46S	MOTOROLA	获取价格	Power Bipolar Transistor, 15A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
BDW46T	MOTOROLA	获取价格	15A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB
BDW46U	MOTOROLA	获取价格	暂无描述
BDW46U2	MOTOROLA	获取价格	15 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB

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