Datasheet > BDW41

BDW41

更新时间： 2024-09-29 08:51:59

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	100K
描述
isc Silicon NPN Darlington Power Transistor

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中文翻译

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技术参数
数据手册

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BDW41 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.58
Base Number Matches：	1

BDW41 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlington Power Transistor

BDW41

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= 80V(Min)

·High DC Current Gain

: h_FE= 1000(Min) @I_C= 5A

·Low Collector Saturation Voltage

: V_CE(sat)= 2.0V(Max.)@ I_C= 5.0A

= 3.0V(Max.)@ I_C= 10A

·Complement to Type BDW46

APPLICATIONS

·Designed for general purpose and low speed switching

applications

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

UNIT

Collector Current-Continuous

Base Current-Continuous

I_B

0.5

Collector Power Dissipation

@ T_C=25℃

P_C

℃

T_J

Junction Temperature

150

-55~150

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Case

1.47

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

中文翻译

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