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BDW24C PDF预览

BDW24C

更新时间: 2024-11-16 06:41:59
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 121K
描述
isc Silicon PNP Darlington Power Transistor

BDW24C 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.58
Base Number Matches:1

BDW24C 数据手册

 浏览型号BDW24C的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon PNP Darlington Power Transistor  
BDW24/A/B/C  
DESCRIPTION  
·Collector Current -IC= -6A  
·High DC Current Gain-hFE= 750(Min)@ IC= -2A  
·Complement to Type BDW23/A/B/C  
APPLICATIONS  
·Designed for hammer drivers, audio amplifiers applications  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
PARAMETER  
VALUE  
-45  
UNIT  
BDW24  
BDW24A  
BDW24B  
BDW24C  
BDW24  
-60  
Collector-Emitter  
Voltage  
VCER  
V
-80  
-100  
-45  
BDW24A  
BDW24B  
BDW24C  
-60  
Collector-Emitter  
Voltage  
VCEO  
V
-80  
-100  
-5  
VEBO  
IC  
ICM  
IB  
Emitter-Base Voltage  
V
A
Collector Current-Continuous  
Collector Current-Peak  
-6  
-8  
A
Base Current-Continuous  
-0.2  
50  
A
Collector Power Dissipation  
PC  
TJ  
W
@ TC=25℃  
Junction Temperature  
150  
-65~150  
Storage Temperature Range  
Tstg  
isc Websitewww.iscsemi.cn  

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