Datasheet > BDT88F

BDT88F

更新时间： 2024-09-24 06:41:59

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	111K
描述
isc Silicon PNP Power Transistors

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BDT88F 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistors

BDT82F/84F/86F/88F

DESCRIPTION

·DC Current Gain -h_FE= 40(Min)@ I_C= -5A

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= -60V(Min)- BDT82F; -80V(Min)- BDT84F;

-100V(Min)- BDT86F; -120V(Min)- BDT88F

·Complement to Type BDT81F/83F/85F/87F

APPLICATIONS

·Designed for use in audio output stages and general amplifer

and switching applications

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

-60

UNIT

BDT82F

BDT84F

BDT86F

BDT88F

BDT82F

BDT84F

BDT86F

BDT88F

-80

V_CBO

Collector-Base Voltage

-100

-120

-60

-80

V_CEO

Collector-Emitter Voltage

Emitter-Base Voltage

-100

-120

-7

V_EBO

I_C

I_CM

I_B

Collector Current-Continuous

Collector Current-Peak

Base Current

-15

-20

-4

Collector Power Dissipation

T_C=25℃

P_C

T_j

℃

Junction Temperature

150

-65~150

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Case

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

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