Datasheet > BDT83

BDT83

更新时间： 2022-10-15 23:26:28

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	117K
描述
isc Silicon NPN Power Transistors

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BDT83 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistors

BDT81/83/85/87

DESCRIPTION

·DC Current Gain -h_FE= 40(Min)@ I_C= 5A

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= 60V(Min)- BDT81; 80V(Min)- BDT83;

100V(Min)- BDT85; 120V(Min)- BDT87

·Complement to Type BDT82/84/86/88

APPLICATIONS

·Designed for use in audio output stages and general amplifer

and switching applications

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

BDT81

BDT83

BDT85

BDT87

BDT81

BDT83

BDT85

BDT87

V_CBO

Collector-Base Voltage

100

120

V_CEO

Collector-Emitter Voltage

Emitter-Base Voltage

100

120

V_EBO

I_C

I_CM

I_B

Collector Current-Continuous

Collector Current-Peak

Base Current

Collector Power Dissipation

T_C=25℃

P_C

T_j

125

150

-65~150

℃

Junction Temperature

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

℃/W

Thermal Resistance,Junction to Case

R_{th j-c}

Thermal Resistance,Junction to Ambient

R_{th j-a}

isc Website：www.iscsemi.cn

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