INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistors
BDT82/84/86/88
DESCRIPTION
·DC Current Gain -hFE = 40(Min)@ IC= -5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -60V(Min)- BDT82; -80V(Min)- BDT84;
-100V(Min)- BDT86; -120V(Min)- BDT88
·Complement to Type BDT81/83/85/87
APPLICATIONS
·Designed for use in audio output stages and general amplifer
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
-60
UNIT
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
-80
VCBO
Collector-Base Voltage
V
-100
-120
-60
-80
VCEO
Collector-Emitter Voltage
Emitter-Base Voltage
V
-100
-120
-7
VEBO
IC
ICM
IB
V
A
Collector Current-Continuous
Collector Current-Peak
Base Current
-15
-20
A
-4
A
Collector Power Dissipation
TC=25℃
PC
Tj
125
150
-65~150
W
℃
℃
Junction Temperature
Storage Temperature Range
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
℃/W
℃/W
Thermal Resistance,Junction to Case
1
Rth j-c
Thermal Resistance,Junction to Ambient
70
Rth j-a
isc Website:www.iscsemi.cn