BDT65CF

更新时间： 2024-01-05 11:46:49

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	115K
描述
isc Silicon NPN Darlington Power Transistor

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数据手册

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BDT65CF 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlington Power Transistor

BDT65F/AF/BF/CF

DESCRIPTION

·Collector Current -I_C= 12A

·High DC Current Gain-h_FE= 1000(Min)@ I_C= 5A

·Complement to Type BDT64F/AF/BF/CF

APPLICATIONS

·Designed for audio output stages and general purpose

amplifier applications

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

BDT65F

BDT65AF

BDT65BF

BDT65CF

BDT65F

Collector-Emitter

Voltage

V_CER

100

120

BDT65AF

BDT65BF

BDT65CF

Collector-Emitter

Voltage

V_CEO

100

120

V_EBO

I_C

I_CM

I_B

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

0.5

Collector Power Dissipation

@ T_C=25℃

P_C

T_J

℃

Junction Temperature

150

-65~150

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance, Junction to Case

5.7

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

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