Datasheet > BDT32C

BDT32C

更新时间： 2024-01-06 23:08:55

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	116K
描述
isc Silicon PNP Power Transistors

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BDT32C 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistors

BDT32/A/B/C

DESCRIPTION

·DC Current Gain -h_FE= 25(Min)@ I_C= -1.0A

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= -40V(Min)- BDT32; -60V(Min)- BDT32A

-80V(Min)- BDT32B; -100V(Min)- BDT32C

·Complement to Type BDT31/A/B/C

APPLICATIONS

·Designed for use in audio output stages and general amplifier

and switching applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

-80

UNIT

BDT32

BDT 32A

BDT 32B

BDT 32C

BDT32

-100

-120

-140

-40

V_CBO

Collector-Base Voltage

BDT 32A

BDT 32B

BDT 32C

-60

V_CEO

Collector-Emitter Voltage

Emitter-Base Voltage

-80

-100

-5

V_EBO

I_C

I_CM

I_B

Collector Current-Continuous

Collector Current-Peak

Base Current

-3

-5

-1

Collector Power Dissipation

T_C=25℃

P_C

T_j

℃

Junction Temperature

150

-65~150

Storage Ttemperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

3.12

UNIT

℃/W

Thermal Resistance,Junction to Case

Thermal Resistance,Junction to Ambient

R_{th j-c}

R_{th j-a}

isc Website：www.iscsemi.cn

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