Datasheet > BD9S400MUF-CE2

BD9S400MUF-CE2

更新时间： 2025-07-18 19:31:15

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
45页	3426K
描述
元器件封装:VQFN016V3030;

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中文翻译

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BD9S400MUF-CE2 数据手册

Datasheet

2.7V to 5.5V Input, 4A Integrated MOSFET

Single Synchronous Buck DC/DC Converter

For Automotive

BD9S400MUF-C

General Description

Key Specifications

BD9S400MUF-C is

synchronous buck DC/DC



Input Voltage:

Output Voltage Setting:

Output Current:

Switching Frequency:

High Side MOSFET ON Resistance: 35mΩ (Typ)

Low Side MOSFET ON Resistance: 35mΩ (Typ)

2.7V to 5.5V

0.8V to V_PVINx 0.8V

4A(Max)

Converter with built-in low On Resistance power

MOSFETs. It is capable of providing current up to 4A.

The SLLM^TMcontrol provides excellent efficiency

characteristics in light-load conditions which make the

product ideal for reducing standby power consumption of

equipment. Small inductor is applicable due to high

switching frequency of 2.2MHz. It is a current mode

control DC/DC Converter and features high-speed

transient response. Phase compensation can also be set

easily.

2.2MHz(Typ)

Shutdown Circuit Current:

Operating Temperature:

0μA (Typ)

-40°C to +125°C

Package

W(Typ) x D(Typ) x H(Max)

3.00mm x 3.00mm x 1.00mm

VQFN16FV3030

It can also be synchronized to external pulse.

Features



SLLM^TM(Simple Light Load Mode) Control



AEC-Q100 Qualified^{(Note 1)}

Single Synchronous Buck DC/DC Converter

Adjustable Soft Start Function

Power Good Output

Enlarged View

Input Under Voltage Lockout Protection

Short Circuit Protection

Output Over Voltage Protection

Over Current Protection

VQFN16FV3030

Wettable Flank Package

Thermal Shutdown Protection

Wettable Flank QFN Package

(Note 1) Grade 1

Applications



Automotive Equipment

(Cluster Panel, Infotainment Systems)

Other Electronic Equipment



Typical Application Circuit

V_IN

PVIN

PGD

AVIN

BOOT

V_MODE/SYNC

V_EN

C₁

L₁

C_IN1

C_IN2

MODE/SYNC

V_OUT

ITH

C_OUT

R₁

R₂

PGND

AGND

R₃

C₂

C₃

Figure 1. Application Circuit

SLLM^TMis a trademark of ROHM Co., Ltd.

〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays

www.rohm.com

TSZ02201-0J1J0AL01350-1-2

TSZ22111 • 14 • 001

1/42

04.Dec.2017 Rev.002

12 3 4 5 6 7...45

中文翻译

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