BD952

更新时间： 2024-02-24 23:48:31

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	111K
描述
isc Silicon PNP Power Transistor

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BD952 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

BD952

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= -80V(Min)

·DC Current Gain-

: h_FE= 40(Min)@ I_C= -500mA

·Complement to Type BD951

APPLICATIONS

·Designed for power amplifier and switching applications

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

-80

UNIT

-80

-5

Collector Current-Continuous

Collector Current-Peak

-5

I_CM

-8

Collector Power Dissipation

@ T_C=25℃

P_C

℃

T_J

Junction Temperature

150

-65~150

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

3.12

UNIT

℃/W

Thermal Resistance,Junction to Case

Thermal Resistance,Junction to Ambient

R_{th j-c}

R_{th j-a}

isc Website：www.iscsemi.cn

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