Datasheet > BD945F

BD945F

更新时间： 2024-12-01 08:51:55

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	115K
描述
isc Silicon NPN Power Transistor

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中文翻译

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数据手册

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BD945F 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BD943F/945F/947F

DESCRIPTION

·DC Current Gain-

: h_FE= 85(Min)@ I_C= 500mA

·Complement to Type BD944F/946F/948F

APPLICATIONS

·Designed for use in audio output stages and general

purpose amplifier applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

BD943F

BD945F

BD947F

BD943F

BD945F

BD947F

V_CBO

Collector-Base Voltage

V_CEO

Collector-Emitter Voltage

Emitter-Base Voltage

V_EBO

I_C

I_CM

I_B

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

Collector Power Dissipation

@ T_C=25℃

P_C

T_J

℃

Junction Temperature

150

Storage Temperature Range

-65~150

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Case

7.93

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

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