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BD940F PDF预览

BD940F

更新时间: 2024-11-30 06:41:55
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 113K
描述
isc Silicon PNP Power Transistor

BD940F 数据手册

 浏览型号BD940F的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon PNP Power Transistor  
BD934F/936F/938F/940F/942F  
DESCRIPTION  
·DC Current Gain-  
: hFE= 40(Min)@ IC= -150mA  
·Complement to Type BD933F/935F/937F/939F/941F  
APPLICATIONS  
·Designed for use in output stages of audio and television  
amplifier circuits where high peak powers can occur.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
PARAMETER  
VALUE  
-45  
UNIT  
BD934F  
BD936F  
BD938F  
BD940F  
BD942F  
BD934F  
BD936F  
BD938F  
BD940F  
BD942F  
-60  
VCBO  
Collector-Base Voltage  
V
-100  
-120  
-140  
-45  
-60  
VCEO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
-80  
-100  
-120  
-5  
VEBO  
IC  
ICM  
IB  
V
A
Collector Current-Continuous  
Collector Current-Peak  
-3  
-7  
A
Base Current-Continuous  
-0.5  
19  
A
Collector Power Dissipation  
@ TC=25℃  
PC  
TJ  
W
Junction Temperature  
150  
-65~150  
Storage Temperature Range  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
4.17  
55  
UNIT  
/W  
/W  
Thermal Resistance,Junction to Case  
Thermal Resistance,Junction to Ambient  
Rth j-c  
Rth j-a  
isc Websitewww.iscsemi.cn  

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