Datasheet > BD936

BD936

更新时间： 2024-11-29 06:41:55

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	117K
描述
isc Silicon PNP Power Transistor

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BD936 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

BD934/936/938/940/942

DESCRIPTION

·DC Current Gain-

: h_FE= 40(Min)@ I_C= -150mA

·Complement to Type BD933/935/937/939/941

APPLICATIONS

·Designed for use in output stages of audio and television

amplifier circuits where high peak powers can occur.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

-45

UNIT

BD934

BD936

BD938

BD940

BD942

BD934

BD936

BD938

BD940

BD942

-60

V_CBO

Collector-Base Voltage

-100

-120

-140

-45

-60

V_CEO

Collector-Emitter Voltage

Emitter-Base Voltage

-80

-100

-120

-5

V_EBO

I_C

I_CM

I_B

Collector Current-Continuous

Collector Current-Peak

-3

-7

Base Current-Continuous

-0.5

Collector Power Dissipation

@ T_C=25℃

P_C

T_J

℃

Junction Temperature

150

-65~150

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

℃/W

Thermal Resistance,Junction to Case

Thermal Resistance,Junction to Ambient

4.17

R_{th j-c}

R_{th j-a}

isc Website：www.iscsemi.cn

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