Datasheet > BD935F

BD935F

更新时间： 2024-11-29 06:41:55

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	113K
描述
isc Silicon NPN Power Transistor

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

BD935F 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.57
Base Number Matches：	1

BD935F 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BD933F/935F/937F/939F/941F

DESCRIPTION

·DC Current Gain-

: h_FE= 40(Min)@ I_C= 150mA

·Complement to Type BD934F/936F/938F/940F/942F

APPLICATIONS

·Designed for use in output stages of audio and television

amplifier circuits where high peak powers can occur.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

BD933F

BD935F

BD937F

BD939F

BD941F

BD933F

BD935F

BD937F

BD939F

BD941F

V_CBO

Collector-Base Voltage

100

120

140

V_CEO

Collector-Emitter Voltage

Emitter-Base Voltage

100

120

V_EBO

I_C

I_CM

I_B

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

0.5

Collector Power Dissipation

@ T_C=25℃

P_C

T_J

℃

Junction Temperature

150

-65~150

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

4.17

UNIT

℃/W

Thermal Resistance,Junction to Case

Thermal Resistance,Junction to Ambient

R_{th j-c}

R_{th j-a}

isc Website：www.iscsemi.cn

中文翻译

下载PDF

与BD935F相关器件

型号	品牌	获取价格	描述	数据表
BD936	ISC	获取价格	isc Silicon PNP Power Transistor
BD936	NJSEMI	获取价格	Trans GP BJT PNP 60V 3A
BD9361GUL	ROHM	获取价格	6ch Internal Power MOSFET System Switching Regulator 1ch LDO
BD9361GUL-E2	ROHM	获取价格	6ch Internal Power MOSFET System Switching Regulator 1ch LDO
BD936F	ISC	获取价格	isc Silicon PNP Power Transistor
BD936F	NJSEMI	获取价格	Trans GP BJT PNP 60V 3A
BD937	ISC	获取价格	isc Silicon NPN Power Transistor
BD937	NXP	获取价格	SILICON EPITAXIAL BASE POWER TRANSISTORS
BD937	NJSEMI	获取价格	Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
BD937F	NXP	获取价格	SILICON EPITAXIAL BASE POWER TRANSISTORS