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BD9251FV PDF预览

BD9251FV

更新时间: 2024-11-29 08:51:55
品牌 Logo 应用领域
罗姆 - ROHM 模拟IC信号电路光电二极管
页数 文件大小 规格书
5页 139K
描述
Silicon Monolithic Integrated Circuit

BD9251FV 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SSOP
包装说明:SSOP,针数:14
Reach Compliance Code:compliantHTS代码:8542.39.00.01
风险等级:5.59Is Samacsys:N
模拟集成电路 - 其他类型:ANALOG CIRCUITJESD-30 代码:R-PDSO-G14
JESD-609代码:e2长度:5 mm
功能数量:1端子数量:14
最高工作温度:75 °C最低工作温度:-30 °C
封装主体材料:PLASTIC/EPOXY封装代码:SSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, SHRINK PITCH
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大供电电压 (Vsup):6 V最小供电电压 (Vsup):2.97 V
标称供电电压 (Vsup):5 V表面贴装:YES
温度等级:COMMERCIAL EXTENDED端子面层:Tin/Copper (Sn/Cu)
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:4.4 mmBase Number Matches:1

BD9251FV 数据手册

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STRUCTURE  
Silicon Monolithic Integrated Circuit  
TYPE  
BD9251FV  
PRODUCT  
Preamp IC for Pyroelectricity Infrared Sensor  
FEATURES  
1)Amplifier for sensor output  
2)Comparator for sensor output  
3)Built-in voltage regulator  
4)Built-in moving detector  
●Absolute Maximum Ratings (Ta=25℃)  
Parameter  
Supply Voltage  
Symbol  
VDD  
Limits  
-0.3~7.0  
440※1  
Units  
V
Pd  
mW  
Power Dissipation  
-30~75  
-55~125  
Operating Temperature  
Storage Temperature  
Topr  
Tstg  
※1. It reduces 3.5mW/℃ then Ta≧25℃. (On glass epoxy board of 70mm×70mm×1.6mm)  
●Operating Conditions  
Parameter  
Supply Voltage  
A1P_IN  
Symbol  
VDD  
Min.  
2.97  
Typ. Max. Units  
Remarks  
5.0  
6.0  
V
VA1P_IN_OFFSET  
-
1.5  
-
V
VDRAIN=2.3V  
Offset Voltage  
This product don't design for protection radioactive rays.  
REV. A  

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