Datasheet > BD912

BD912

更新时间： 2024-11-03 22:27:27

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管
页数	文件大小	规格书
6页	100K
描述
COMPLEMENTARY SILICON POWER TRANSISTORS

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中文翻译

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数据手册
替代型号

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BD912 数据手册

BD909/911

BD910/912

COMPLEMENTARY SILICON POWER TRANSISTORS

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STMicroelectronics PREFERRED

SALESTYPES

DESCRIPTION

The BD909 and BD911 are silicon Epitaxial-Base

NPN power transistors mounted in Jedec TO-220

plastic package. They are intented for use in

power linear and switching applications.

The complementary PNP types are BD910 and

BD912 respectively.

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

NPN

PNP

BD909

BD910

BD911

BD912

100

V_CBO

V_CEO

V_EBO

I_E,I_C

I_B

Collector-Base Voltage (I_E= 0)

Collector-Emitter Voltage (I_B= 0)

Emitter-Base Voltage (I_C= 0)

Collector Current

100

Base Current

P_tot

T_stg

T_j

^oC

Total Dissipation at T_c25 C

≤

Storage Temperature

-65 to 150

150

Max. Operating Junction Temperature

For PNP types voltage and current values are negative.

1/6

October 1999

12 3 4 5 6

中文翻译

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BD912 替代型号

型号	品牌	替代类型	描述	数据表
TIP42CTU	FAIRCHILD	功能相似	PNP Epitaxial Silicon Transistor
BD244CG	ONSEMI	功能相似	Complementary Silicon Plastic Power Transistors
2N6491G	ONSEMI	功能相似	15 AMPERE COMPLEMENTARY SILICON POWER TRANSIS

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