Datasheet > BD912

BD912

更新时间： 2024-11-28 06:41:55

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
5页	172K
描述
Silicon PNP Power Transistors

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中文翻译

获取价格

数据手册

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BD912 数据手册

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

BD910 BD912

DESCRIPTION

·With TO-220C package

·Complement to type BD909 BD911

APPLICATIONS

·Intented for use in power linear

and switching applications

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

Absolute maximum ratings (Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

BD910

BD912

BD910

BD912

-80

V_CBO

Collector-base voltage

Open emitter

-100

-80

V_CEO

Collector-emitter voltage

Open base

-100

-5

V_EBO

I_C

Emitter-base voltage

Collector current

Open collector

-15

I_B

Base current

-5

P_C

T_j

Collector power dissipation

Junction temperature

Storage temperature

T_C≤25℃

℃

150

-65~150

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Thermal resistance junction to case

MAX

UNIT

R_{th j-c}

1.4

℃/W

12 3 4 5

中文翻译

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