Datasheet > BD908

BD908

更新时间： 2024-11-04 06:41:55

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	107K
描述
isc Silicon PNP Power Transistor

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中文翻译

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技术参数
数据手册

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BD908 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.57
Base Number Matches：	1

BD908 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

BD908

DESCRIPTION

·DC Current Gain -

: h_FE= 40@ I_C= -0.5A

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= -60V(Min)

·Complement to Type BD907

APPLICATIONS

·Designed for use in general purpose power amplifier and

switching applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

Base Current

VALUE

UNIT

-60

-5

-15

I_CM

-20

I_B

-5

Collector Power Dissipation

@ T_C=25℃

P_C

℃

T_J

Junction Temperature

150

-65~150

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance, Junction to Case

1.38

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

中文翻译

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