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BD899 PDF预览

BD899

更新时间: 2024-02-12 08:31:08
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 121K
描述
Silicon NPN Power Transistors

BD899 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.74外壳连接:COLLECTOR
最大集电极电流 (IC):8 A集电极-发射极最大电压:80 V
配置:DARLINGTON最小直流电流增益 (hFE):750
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
功耗环境最大值:70 W认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):1 MHz
Base Number Matches:1

BD899 数据手册

 浏览型号BD899的Datasheet PDF文件第2页浏览型号BD899的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
BD895/897/899/901  
DESCRIPTION  
·With TO-220C package  
·Complement to type BD896/898/900/902  
·DARLINGTON  
APPLICATIONS  
·For use in output stages in audio  
equipment ,general amplifier,and  
analogue switching applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
3
Emitter  
Absolute maximum ratings(Ta=25)  
SYMBOL  
PARAMETER  
CONDITIONS  
VAL
45  
UNIT  
BD895  
BD897  
BD899  
BD901  
BD895  
BD897  
BD899  
BD901  
60  
VCBO  
Collector-base voltage  
Open emitter  
Open base  
V
80  
100  
45  
60  
VCEO  
Collector-emitter voltage  
V
80  
100  
5
VEBO  
IC  
Emitter-base voltage  
Collector current-DC  
Base current  
Open collector  
V
A
8
IB  
300  
70  
mA  
TC=25  
Ta=25℃  
PT  
Total power dissipation  
W
2
Tj  
Junction temperature  
Storage temperature  
150  
-65~150  
Tstg  

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