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BD897_2015

更新时间: 2024-11-08 01:15:55
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锦美电子 - JMNIC /
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描述
Silicon PNP Transistors

BD897_2015 数据手册

  
Power Transistors  
www.jmnic.com  
BD897  
Silicon PNP Transistors  
Features  
B C E  
With TO-220 package  
With general-purpose and amplifier applications  
Absolute Maximum Ratings Tc=25  
SYMBOL  
VCBO  
VCEO  
VEBO  
IB  
PARAMETER  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Base collector current  
Collector current  
RATING  
60  
UNIT  
V
V
V
60  
5.0  
IC  
8.0  
70  
A
PC  
Collector power dissipation  
Junction temperature  
Storage temperature  
W
Tj  
150  
Tstg  
-55~150  
TO-220  
Electrical Characteristics Tc=25  
SYMBOL  
PARAMETER  
Collector-base cut-off current  
Emitter-base cut-off current  
Collector-emitter cut-off current  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector-emitter saturation voltages  
Collector-emitter saturation voltages  
Forward current transfer ratio  
Forward current transfer ratio  
Forward current transfer ratio  
Base-emitter on voltages  
CONDITIONS  
MIN  
TYPE  
MAX  
0.2  
UNIT  
mA  
ICBO  
VCB=60V; IE=0  
IEBO  
VEB=5.0V; IC=0  
VCE=60V; IB=0  
2.0  
mA  
ICEO  
0.5  
mA  
VCBO  
V(BR)ceo  
VEBO  
IC=0.1A; IB=0  
60  
V
V
VCE(sat-1)  
VCE(sat-2)  
hFE-1  
IC=3A; IB=12mA  
IC=3A; VCE=3V  
2.5  
2.5  
750  
hFE-2  
hFE-3  
VBE(on)1  
VBE(on)2  
fT  
IC=3A; VCE=3V  
V
Base-emitter on voltages  
Transition frepuency  
Cob  
Output Capacitance  

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