Datasheet > BD896

BD896

更新时间： 2024-09-24 06:41:55

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	121K
描述
Silicon PNP Power Transistors

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中文翻译

获取价格

数据手册

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BD896 数据手册

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

BD896/898/900/902

DESCRIPTION

·With TO-220C package

·Complement to type BD895/897/899/901

·DARLINGTON

APPLICATIONS

·For use in output stages in audio equipment,

general amplifier,and analogue switching

applications

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

-45

UNIT

BD896

BD898

BD900

BD902

BD896

BD898

BD900

BD902

-60

V_CBO

Collector-base voltage

Open emitter

Open base

-80

-100

-45

-60

V_CEO

Collector-emitter voltage

-80

-100

-5

V_EBO

I_C

Emitter-base voltage

Collector current-DC

Base current

Open collector

-8

I_B

-300

T_C=25℃

T_a=25℃

P_T

Total power dissipation

T_j

Junction temperature

Storage temperature

150

-65~150

℃

T_stg

12 3

中文翻译

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与BD896相关器件

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BD8961NV	ROHM	获取价格	Low Noise High Efficiency Step-down Switching Regulator with Built-in Power MOSFET
BD8961NV_10	ROHM	获取价格	Low Noise High Efficiency Step-down Switching Regulator with Built-in Power MOSFET
BD8961NV_12	ROHM	获取价格	4.5V to 5.5V, 2.0A 1ch Synchronous Buck Converter Integrated FET
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BD8962MUV	ROHM	获取价格	Low Noise Step-down High Efficiency Step-down Switching Regulator with Built-in Power MOSF
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