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BD882-O-TP PDF预览

BD882-O-TP

更新时间: 2024-11-02 18:42:35
品牌 Logo 应用领域
美微科 - MCC 晶体管
页数 文件大小 规格书
3页 337K
描述
Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC, PACKAGE-3

BD882-O-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PSSO-F3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.71
最大集电极电流 (IC):3 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):100
JESD-30 代码:R-PSSO-F3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:10晶体管元件材料:SILICON
标称过渡频率 (fT):50 MHzBase Number Matches:1

BD882-O-TP 数据手册

 浏览型号BD882-O-TP的Datasheet PDF文件第2页浏览型号BD882-O-TP的Datasheet PDF文件第3页 
BD882-R  
BD882-O  
BD882-Y  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
BD882-GR  
Features  
·
·
Halogen free available upon request by adding suffix "-HF"  
Silicon  
NPN epitaxial planer  
Transistors  
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
·
·
Marking: D882  
O
Maximum Ratings @ 25 C Unless Otherwise Specified  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current-Continuous  
Collector Dissipation  
Operating Junction Temperature  
Rating  
Unit  
V
V
V
A
SOT-89  
30  
40  
6
3
0.5  
150  
A
K
PC  
TJ  
W
R
B
TSTG  
Storage Temperature  
-55 to +150  
R
E
O
Electrical Characteristics @ 25 C Unless Otherwise Specified  
C
Symbol  
V(BR)CEO  
Parameter  
Collector-Emitter Breakdown Voltage  
(IC=10mAdc, IB=0)  
Collector-Base Breakdown Voltage  
(IC=100uAdc, IE=0)  
Collector-Emitter Breakdown Voltage  
(IE=100uAdc, IC=0)  
Collector Cutoff Current  
(VCB=40Vdc, IE=0)  
Collector Cutoff Current  
(VCB=30Vdc, IB=0)  
Emitter Cutoff Current  
(VEB=6Vdc, IC=0)  
DC Current Gain  
(IC=1Adc, VCE=2Vdc)  
Min  
Typ  
Max  
Units  
D
30  
---  
---  
Vdc  
G
H
V(BR)CBO  
V(BR)EBO  
ICBO  
J
40  
6
---  
---  
---  
---  
---  
---  
1
Vdc  
F
Vdc  
---  
---  
uAdc  
uAdc  
ꢀ  
ICEO  
10  
1
2
3
IEBO  
hFE  
1. BASE  
---  
---  
1
uAdc  
2. COLLETOR  
3. EMITTER  
60  
----  
400  
VCE(sat)  
VBE(sat)  
Collector-Emitter Saturation Voltage  
(IC=2Adc, IB=0.2Adc)  
---  
---  
----  
----  
0.5  
1.5  
Vdc  
Vdc  
Base-Emitter Saturation Voltage  
(IC=2Adc, IB=0.2Adc)  
ꢀꢁꢂꢃꢄꢅꢁꢄꢅꢆ  
ꢈꢀꢇꢆ  
ꢀꢁꢂꢃꢄꢅꢆ  
ꢇꢀꢁꢆ ꢇꢉꢊꢆ  
ꢇꢇꢆ  
ꢁꢋꢌꢄꢅꢆ  
ꢇꢉꢊꢆ  
Transition frequency  
(VCE=5Vdc, f=10MHz, IC=0.1A)  
ft  
50  
---  
---  
MHz  
ꢇꢀꢁꢆ  
ꢒꢍꢐꢓꢆ  
1.55  
ꢉꢆ  
ꢍꢎꢏꢐꢆ  
ꢍꢎꢑꢎꢆ  
ꢒꢍꢔꢕꢆ  
ꢇꢇꢇꢇꢇ  
.061  
ꢇꢇꢇꢇꢇ  
REF.  
ꢂꢆ  
ꢈꢆ  
ꢄꢆ  
ꢙꢆ  
ꢝꢆ  
ꢃꢆ  
ꢞꢆ  
ꢍꢎꢗꢒꢆ  
ꢍꢕꢐꢎꢆ  
ꢍꢕꢓꢘꢆ  
ꢍꢎꢎꢑꢆ  
ꢍꢕꢎꢐꢆ  
ꢍꢕꢎꢗꢆ  
ꢍꢕꢎꢗꢆ  
ꢍꢕꢗꢗꢆ  
ꢍꢎꢔꢗꢆ  
ꢍꢕꢐꢓꢆ  
ꢍꢎꢕꢕꢆ  
ꢚꢚꢚꢚꢚꢆ  
ꢍꢕꢎꢓꢆ  
ꢍꢕꢘꢎꢆ  
ꢍꢕꢎꢔꢆ  
ꢍꢕꢔꢐꢆ  
ꢐꢍꢓꢎꢆ  
ꢕꢍꢑꢕꢆ  
ꢘꢍꢐꢒꢆ  
ꢐꢍꢕꢕꢆ  
ꢕꢍꢐꢐꢆ  
ꢕꢍꢐꢑꢆ  
ꢕꢍꢐꢑꢆ  
ꢎꢍꢒꢕꢆ  
ꢒꢍ25  
ꢎꢍꢕꢕꢆ  
ꢘꢍꢗꢒꢆ  
ꢚꢚꢚꢚꢚꢆ  
ꢕꢍꢒꢑꢆ  
ꢕꢍꢗꢐꢆ  
ꢕꢍꢒꢎꢆ  
ꢎꢍꢔꢕꢆ  
CLASSIFICATION OF hFE  
ꢌꢛꢜꢆ  
Rank  
R
Y
GR  
O
100-200  
200-400  
60-120  
160-320  
Range  
 ꢆ  
www.mccsemi.com  
1 of 3  
Revision: B  
2013/01/01  

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