Datasheet > BD82006FVJ-MGE2

BD82006FVJ-MGE2

更新时间： 2024-02-18 19:46:47

品牌	Logo	应用领域
罗姆 - ROHM		驱动接口集成电路
页数	文件大小	规格书
26页	902K
描述
Buffer/Inverter Based Peripheral Driver,

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技术参数
数据手册

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BD82006FVJ-MGE2 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8542.39.00.01
Factory Lead Time：	10 weeks	风险等级：	1.72
接口集成电路类型：	BUFFER OR INVERTER BASED PERIPHERAL DRIVER	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

BD82006FVJ-MGE2 数据手册

Datasheet

1ch High Side Switch ICs

2.4A Current Limit High Side Switch ICs

BD82006FVJ-M BD82007FVJ-M

General Description

Key Specifications

 Input Voltage Range:

 ON-Resistance:

BD82006FVJ-M and BD82007FVJ-M are low

on-resistance N-Channel MOSFET high-side power

switches optimized for Universal Serial Bus (USB)

applications. BD82006FVJ-M and BD82007FVJ-M are

equipped with the function of over-current protection,

thermal shutdown, under-voltage lockout and soft-start.

2.7V to 5.5 V

70mΩ(Typ)

1.5A (Min), 3.0A (Max)

1ch

 Over-Current Threshold:

 Number of Channels:

 Output Rise Time:

 Standby Current:

0.8ms(Typ)

0.01μA (Typ)

 Operating Temperature Range:

-40°C to +85°C

Features

Package

W(Typ) D(Typ) H (Max)



AEC-Q100 Qualified



Built-in Low ON-Resistance (Typ 70mΩ)

N-Channel MOSFET

 Current Limit Threshold 2.4A

 Over-Current Protection

 Thermal Shutdown

 Open-Drain Fault Flag Output

 Under-Voltage Lockout Protection

 Soft-Start Circuit

 Reverse Current Protection when

Power Switch Off

 Control Input Logic

TSSOP-B8J

3.00mm x 4.90mm x 1.10mm



Active-High : BD82006FVJ-M

Active-Low : BD82007FVJ-M

 TTL Enable Input

Applications

Car Accessory

Typical Application Circuit

5V(Typ)

5V(typ.)

3.3V

VOUT

GND

OUT

10kΩ to

10kΩ~

100kΩ

CIN

100kΩ

C_L

OUT

EN(/EN) /OC

Lineup

Current Limit Threshold

Control Input

Logic

Package

Orderable Part Number

Min

1.5A

Typ

2.4A

Max

3.0A

High

Low

TSSOP-B8J Reel of 2500 BD82006FVJ-MGE2

TSSOP-B8J Reel of 2500 BD82007FVJ-MGE2

○Product structure：Silicon monolithic integrated circuit ○This product has not designed protection against radioactive rays

www.rohm.com

TSZ22111･14･001

TSZ02201-0GGG0H300020-1-2

05.Feb.2015 Rev.001

1/23

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