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BD8165MUV-E2 PDF预览

BD8165MUV-E2

更新时间: 2024-11-11 20:10:43
品牌 Logo 应用领域
罗姆 - ROHM /
页数 文件大小 规格书
5页 163K
描述
Power Management Circuit, PQCC48

BD8165MUV-E2 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:1.68JESD-30 代码:S-PQCC-N48
端子数量:48最高工作温度:105 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:QCCN封装等效代码:LCC48,.27SQ,20
封装形状:SQUARE封装形式:CHIP CARRIER
电源:12,15 V认证状态:Not Qualified
子类别:Power Management Circuits表面贴装:YES
温度等级:INDUSTRIAL端子形式:NO LEAD
端子节距:0.5 mm端子位置:QUAD
Base Number Matches:1

BD8165MUV-E2 数据手册

 浏览型号BD8165MUV-E2的Datasheet PDF文件第2页浏览型号BD8165MUV-E2的Datasheet PDF文件第3页浏览型号BD8165MUV-E2的Datasheet PDF文件第4页浏览型号BD8165MUV-E2的Datasheet PDF文件第5页 
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STRUCTURE  
PRODUCT NAME  
TYPE  
Silicon Monolithic Integrated Circuit  
Multi-Channel Power IC  
BD8165MUV  
FEATURES  
Built-in 5-channel outputs for TFT-LCD Display  
Built-inVCOM AMP  
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)  
PARAMETER  
SYMBOL  
VCC,PVCC2,3  
LDVCC1  
HVCC  
LIMITS  
15  
UNIT  
V
Supply Voltage 1  
7
V
Supply Voltage 2  
20  
V
Supply Voltage 3  
SW1 Voltage  
VSW1  
22  
V
Tjmax  
150  
mW  
Junction Temperature  
Power Dissipation  
Pd  
4826*1  
-40105  
-55150  
Operating Temperature Range  
Storage Temperature Range  
Topr  
Tstg  
*1 Decreased in done 38.6mW/℃ for operating above Ta≧25℃,  
mounted on 70×70×1.6mm 4 layer Glass-epoxy PCB.(back foil 70.0mm×70.0mm)  
OPERATING CONDITIONS(Ta=-40+105)  
Parameter  
Supply Voltage 1  
Supply Voltage 2  
Supply Voltage 3  
SW1 Voltage  
Symbol  
VCC,PVCC2,3  
LDVCC1  
HVCC  
MIN  
4.2  
-
MAX  
14  
Unit  
V
5.5  
18  
V
6
V
VSW1  
-
18  
V
Status of this document  
The Japanese version of this document is the formal specification.  
A customer may use this translation version only for a reference to help reading the formal version.  
If there are any differences in translation version of this document, formal version takes priority.  
REV. D  

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