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BD810

更新时间: 2024-02-23 07:53:22
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 41K
描述
Silicon PNP Power Transistors

BD810 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.74Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):10 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):15JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:PNP功耗环境最大值:90 W
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):1.5 MHzBase Number Matches:1

BD810 数据手册

 浏览型号BD810的Datasheet PDF文件第2页浏览型号BD810的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
BD810  
DESCRIPTION  
·
·With TO-220C package  
·Complement to type BD809  
·DC current gain  
: hFE = 30 (Min) @ IC = 2.0 Adc  
APPLICATIONS  
·Designed for use in high power audio  
amplifiers utilizing complementary or  
quasi complementary circuits.  
PINNING  
PIN  
1
DESCRIPTION  
Emitter  
Collector;connected to  
mounting base  
2
3
Base  
Absolute maximum ratings (Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
CONDITIONS  
Open emitter  
VALUE  
-80  
UNIT  
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Open base  
-80  
V
Open collector  
-5  
V
-10  
A
IB  
Base current  
-6  
A
PD  
Total power dissipation  
Junction temperature  
Storage temperature  
TC=25  
90  
W
Tj  
150  
-55~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Rth j-c  
Thermal resistance junction to case  
1.39  
/W  

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